K. Basavaswaran, T. Sugiura, Y. Ueno and H. Minoura, “Preparation of Polycrystalline CuIn11S17 Semiconductor with High Crystallinity and Its Preparation of Polycrystalline CuIn11S17 Semiconductor with High Crystallinity and Its Characterization,” Journal of Materials Science Letters, Vol. 9, No. 12, 1990, pp. 1448-1452. doi:10.1007/BF00721612

has been cited by the following article:

• TITLE: Synthesis and Characterization of CuIn2n+1 S3n+2 (with n = 0, 1, 2, 3 and 5) Powders

  AUTHORS: Naoufel Khemiri, Dhafer Abdelkader, Bilel Khalfallah, Mounir Kanzari

  KEYWORDS: CuIn2n+1 S3n+2; Synthesis; Structural Properties

  JOURNAL NAME: Open Journal of Synthesis Theory and Applications, Vol.2 No.1, January 28, 2013

  ABSTRACT: CuIn2n+1 S3n+2 crystals were synthesized by horizontal Bridgman method using high purity copper, indium, sulfur elements. The phases and crystallographic structure of the CuIn2n+1S3n+2 crystals were analyzed by X-ray diffraction (XRD) and the composition of the material powders was determined using the energy dispersive X-ray analysis (EDX). Measurement data revealed that CuIn2n+1S3n+2 materials have not the same structure. In fact, CuInS2 and CuIn3S5 crystallize in the chalcopyrite structure whereas CuIn5S8, CuIn7S11 and CuIn11S17 crystallize in the cubic spinel structure.