T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, “Si nanocrystal based memories: Effect of the nanocrystal density,” J. Appl. Phys., Vol. 100, 2006, pp. 014310. doi:10.1063/1.2214300

has been cited by the following article:

• TITLE: The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure

  AUTHORS: Xiang Wang, Chao Song, Yanqing Guo, Jie Song, Rui Huang

  KEYWORDS: nc-Si dots; Capacitance-Voltage Measurement; Storage

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.3 No.1B, January 21, 2013

  ABSTRACT: Doubly stacked nanocrystalline-Si (nc-Si) based metal insulator semiconductor memory structure was fabricated by plasma enhanced chemical vapor deposition. Capacitance-Voltage (C-V) and capacitance-time (C-t) measurements were used to investigate electron tunnel, storage and discharging characteristic. The C-V results show that the flatband voltage increases at first, then decreases and finally increases, exhibiting a clear deep at gate voltage of 9 V. The de-creasing of flatband voltage at moderate programming bias is attributed to the transfer of electrons from the lower nc-Si layer to the upper nc-Si layer. The C-t measurement results show that the charges transfer in the structure strongly de-pends on the hold time and the flatband voltage decreases markedly with increasing the hold time.