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H. F. Sun and C. R. Bolognesi, “Anomalous Behavior of Algan/Gan Heterostructure Field-Effect Transistors at Cryogenic Temperatures: From Current Collapse to Current Enhancement with Cooling,” Applied Physics Letters, Vol. 90, No. 12, 2007, Article ID: 123505. doi:10.1063/1.2715032

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