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Diasse, O., Diao, A., Wade, M., Diouf, M.S., Diatta, I., Mane, R., Traore, Y. and Sissoko, G. (2018) Back Surface Recombination Velocity Modeling in White Bias Silicon Solar Cell under Steady State. World Journal of Condensed Matter Physics, 9, 189-201.
has been cited by the following article:
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TITLE:
Ac Recombination Velocity in a Lamella Silicon Solar Cell
AUTHORS:
Matar Gueye, Hawa Ly Diallo, Attoumane Kosso Mamadou Moustapha, Youssou Traore, Ibrahima Diatta, Gregoire Sissoko
KEYWORDS:
Silicon Solar Cell-Vertical Junction Series, Ac Recombination Velocity, Lamella Width
JOURNAL NAME:
World Journal of Condensed Matter Physics,
Vol.8 No.4,
November
12,
2018
ABSTRACT: The silicon solar cell with series-connected vertical junction is studied with different lamella widths—the expression of the ac recombination velocity of the excess minority carrier at the back surface is established. Spectroscopy technique reveals dominated impact of the lamella widths of the base.
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