De, S.S., Ghosh, A.K., Bera, M., Hajra, A. and Haldar, J.C. (1996) Influence of Built-In Potential on the Effective Surface Recombination Velocity for a Heavily Doped High-Low Junction. Physica B, 228, 363-368.
https://doi.org/10.1016/S0921-4526(96)00474-7

has been cited by the following article:

• TITLE: Ac Recombination Velocity in a Lamella Silicon Solar Cell

  AUTHORS: Matar Gueye, Hawa Ly Diallo, Attoumane Kosso Mamadou Moustapha, Youssou Traore, Ibrahima Diatta, Gregoire Sissoko

  KEYWORDS: Silicon Solar Cell-Vertical Junction Series, Ac Recombination Velocity, Lamella Width

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.8 No.4, November 12, 2018

  ABSTRACT: The silicon solar cell with series-connected vertical junction is studied with different lamella widths—the expression of the ac recombination velocity of the excess minority carrier at the back surface is established. Spectroscopy technique reveals dominated impact of the lamella widths of the base.