Yu. E. Prazdnikov, A. D. Bozhko and N. D. Novikov, “Energetic Barrier Reduction at the Carbyne Film Interface,” Journal of Russian Laser Research, Vol. 26, No. 1, 2005, pp. 55-65. doi:10.1007/s10946-005-0006-4

has been cited by the following article:

• TITLE: Prospects of Carbyne Applications in Microelectronics

  AUTHORS: Yuri Prazdnikov

  KEYWORDS: Carbyne, Transistor, Nanoswitch

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.8, August 8, 2011

  ABSTRACT: We design carbyne transistor which is integrable into the existing silicon technology and can be scaled up in a rather broad range -- starting from that prepared by us (by 0.5-mkm technology) up to the monomolecular one because the key mechanism here is the inter-chain charge transfer.