TITLE:
A Ge-Graded SiGe HBT with β > 100 and fT = 67 GHz
AUTHORS:
Jing Zhang, Yonghui Yang, Guangbing Chen, Yuxin Wang, Dongbing Hu, Kaizhou Tan, Wei Cui, Zhaohuan Tang
KEYWORDS:
RPCVD, SiGe, HBT, Graded Profile, SiGe BiCMOS
JOURNAL NAME:
World Journal of Engineering and Technology,
Vol.3 No.4B,
November
20,
2015
ABSTRACT:
By using reduced pressure chemical vapor
deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been
realized. The film was used as a base of the HBT (Heterojunction Bipolar
Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the
device give good DC characteristics (β > 100) and high-frequency performance
(fT = 67 GHz), thus meeting the requirements for technical specifications in
0.35 μm SiGe BiCMOS process technology.