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Author(s): |
Chong Wang, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology,Yunnan University , Kunming 650091 , China ;
Jie Yang, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology,Yunnan University , Kunming 650091 , China ;
Hong-xing Pan, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology,Yunnan University , Kunming 650091 , China ;
Zhi-quan Lu, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology,Yunnan University , Kunming 650091 , China ;
Liang Li, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology,Yunnan University , Kunming 650091 , China ;
Yu Yang, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology,Yunnan University , Kunming 650091 , China ; |
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Abstract: |
A series of Ge/Si (100) nanoislands samples with different Ge deposited amount, Ge growth temperature and Si buffer layer growth temperature grown by magnetron sputtering were studied by AFM and Raman spectra. The results showed that with Ge deposited amount increasing, the size of Ge nanoislands increased, their size distribution broaden and their density decreased; with Ge growth temperatura increasing, Ge nanoislands became lager and less uniform in shape and their density became smaller; with Si buffer layer growth temperature increasing, Ge nanoislands became smaller and more uniform and their density became bigger. The reason for these results was discussed.
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