Author(s): |
Liang Kang, State Key Lab of Crystal Materials, Shandong University, Jinan, P. R. of China, 250100 Hong-liang Lv, School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, Yu-ming Zhang, School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, Yi-men Zhang, School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, Jun-rui Xu, School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, |