|
Author(s): |
A-lan Meng, Key Laboratory of Eco-chemical Engineering, Ministry of Education, College of Chemistry and Molecular Engineering, QUST, Qingdao,
Wei-peng Ren, College of Electromechanical Engineering, QUST, Qingdao, China
Zhen-jiang Li, College of Electromechanical Engineering, QUST, Qingdao, China
Meng Zhang, College of Electromechanical Engineering, QUST, Qingdao, China
Shi-bin Sun, College of Electromechanical Engineering, QUST, Qingdao, China |
|
Abstract: |
In this paper, homemade SiC nanowires prepared via chemical vapor reaction was purified by calcination in combination with subsequent HF etching processing. The products were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM) and selected area electron diffraction (SAED), and then the field emission (FE) properties of the unpurified and purified SiC nanowires were measured. Results suggested that the SiC nanowires presented well-distributed and their curvature were reduced after being purified, in addition, SiC nanowires separated from each other instead of felting together, FE properties were improved, with turn-on and threshold fields decreased by 1.1V/μm and 0.6V/μm, respectively.
|