|
Author(s): |
Tai-sheng Yang, Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering,Beihang University, Beijing, 100191
Chun-yan Xie, Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering,Beihang University, Beijing, 100191
Yue Zhang, Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering,Beihang University, Beijing, 100191 |
|
Abstract: |
Al doped ZnO films were prepared by self-designed metal organic chemical vapor deposition (MOCVD), Zn (C5H7O2)2.H2O and A l(C5H7O3)3 were used as Zinc source and Aluminum source, respectively, nitrogen was used as carrier gas. The films were characterized by X-ray diffraction (XRD) and the scanning electron microscopy (SEM). The four-point probe was used to investigate the electronic property of the films. The results indicate that the Al-doped ZnO films were hexagonal wurtzite crystal structures with highly c-axis orientation, and the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films. The temperature of substrates, flux of carrier gas have important influences on the microstructures and the properties of the films, and the moderate doped content of Al and uniform, compact structures lead to most optimized properties.
|