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Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK)

Changsha,China,10.16-10.18,2010

ISBN: 978-1-935068-41-9 Scientific Research Publishing, USA

E-Book 2313pp Pub. Date: October 2010

Category: Chemistry & Materials Science

Price: $360

Title: Effect of Mg Content on Structural, Optical and Electrical Properties of Zn1- xMgxO Thin Films
Source: Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK) (pp 1013-1017)
Author(s): Gui-juan Huang, Department of Applied Physics, Chongqing Normal University, Chongqing 400030, China
Chun-yang Kong, Department of Applied Physics, Chongqing Normal University, Chongqing 400030, China
Guo-ping Qin, Department of Applied Physics, Chongqing Normal University, Chongqing 400030, China
Hai-bo Ruan, Department of Applied Physics, Chongqing University, Chongqing 400030, China
Abstract: Zn1-xMgxO（0? x ?0.09）films are fabricated on quartz glass substrates by radio frequency (RF) magnetron sputtering technique. The influence of varying Mg composition on the structure、optical and electrical properties of the Zn1- xMgx O films are investigated by x-ray diffractormeter (XRD), optical transmission measurement and Hall measurement. It is found that all the films show good crystallization with c -axis orientation and a high optical transparency ( ? 80%) in the visible region. A blue shift in absorption edge indicates that the band gap increased as the increase of Mg content. Considering the conduction-band shifts to higher energy and increasing the activation energy of the defect donor states, the relationship between carrier concentration and Mg content is calculated, which is in agreement with the consequence of Hall measurement. In addition, the conductivity become weak drastically when Mg composition ratio x up to 0.09 mainly due to the increasing activation energy of the defect donor states and a mass of impurity scattering.
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