Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK)

Changsha,China,10.16-10.18,2010

ISBN: 978-1-935068-41-9 Scientific Research Publishing, USA

E-Book 2313pp Pub. Date: October 2010

Category: Chemistry & Materials Science

Price: $360

Title: Influence of the Growth Temperature of Si Buffer Layers on Ge Quantum Dots
Source: Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK) (pp 2040-2043)
Author(s): Hong-xing Pan, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Chong Wang, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Fei Xiong, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Xue-gui Zhang, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Jie Yang, Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Tian-xin Li, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
Abstract: A series of Ge quantum dot samples were grown on Si(100) substrates with a Si buffer layer by ion beam sputtering. The surface morphology and structure were studied with AFM and Raman spectra. The topography as well as the evolution of the size and density of Ge quantum dots was observed with changing the growth temperature of Si buffer layers. It is indicated that the topography of Ge quantum dots as well as their size and density could be controlled by the growth temperature of Si buffer layers. Consequently, Ge quantum dots with narrow size distribution and high density can be obtained by the ion beam sputtering technique. The effects of Si buffer layers which manipulate the growth and shape of the Ge quantum dots were well discussed.
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