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Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

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DOI: 10.4236/jmp.2011.29124    5,155 Downloads   9,020 Views   Citations

ABSTRACT

Gap states in amorphous hydrogenated silicon (a-Si:H) doped and microcrystalline silicon doped n and p were examined by analysis of subgap absorption spectra obtained by the Constant Photocurrent Method (CPM) and the Photothermal Deflection Spectroscopy (PDS). Assuming a Gaussian distribution of defect states in the gap, broad distribution of states was found in a-Si:H and doped a-Si:H. A dependence of the defect concentration on Fermi energy was detected and analysed by thermodynamic model of defect formation in a-Si:H.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

L. F., B. Abdelkader, S. D., B. Y., C. L. and A. A., "Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon," Journal of Modern Physics, Vol. 2 No. 9, 2011, pp. 1030-1036. doi: 10.4236/jmp.2011.29124.

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