Share This Article:

Heating of the Electrons and the Rectified Current at the Contacts That Are in an Alternating Electromagnetic Field

Abstract Full-Text HTML XML Download Download as PDF (Size:1113KB) PP. 48-53
DOI: 10.4236/wjcmp.2015.51007    5,367 Downloads   5,635 Views  

ABSTRACT

The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Gulyamov, G. and Dadamirzaev, M. (2015) Heating of the Electrons and the Rectified Current at the Contacts That Are in an Alternating Electromagnetic Field. World Journal of Condensed Matter Physics, 5, 48-53. doi: 10.4236/wjcmp.2015.51007.

References

[1] Pozhela, J.K. and Repshas, K.K. (1968) Thermoelectric Force of Hot Carriers. Physica Status Solidi, 27, 757-762.
http://dx.doi.org/10.1002/pssb.19680270233
[2] Veynger, A.I., Paritssky, L.G., Hakobyan, E.A. and Dadamirzaev, G. (1975) Thermopower Hot Carriers on the p-n-Transition. Semiconductors-Leningrad, 9, 216-224.
[3] Dadamirzaev, M.G. (2013) Heating of Electrons and Holes in Asymmetric p-n-Junction, Located in a Microwave Field. Physical Surface Engineering-Ukraine, 11, 191-193.
[4] Usanov, D.A., Skripal, A.V., Ugryumova, N.V., Wenig, S.B. and Orlov, V.E. (2000) The Occurrence of Negative Differential Resistance Mode and Switch to the Tunnel Diode by an External Microwave Signal. Semiconductors-St. Petersburg, 34, 567-571.
[5] Ablyazimova, N.A., Veynger, A.I. and Nutrition, V. (1988) Elektricheskie Properties of Silicon p-n-Junctions in Strong Microwave Fields. Semiconductors-St. Petersburg, 22, 2001-2007.
[6] Gulyamov, G., Dadamirzaev, M.G. and Boydedaev, S.R. (2000) Kinetics of the Establishment of the Thermopower of Hot Carriers in the p-n-Junction, Taking into Account the Heating of the Lattice. Semiconductors-St. Petersburg, 34, 266-269.
[7] Gulyamov, G., Dadamirzaev, M.G. and Boydedaev, S.R. (2000) Emf of Hot Carriers Due to the Modulation of the Surface Potential in a Strong Microwave Field. Semiconductors-St. Petersburg, 34, 572-575.
[8] Shamirzaev, S.H., Gulyamov, G., Dadamirzaev, M.G. and Gulyamov, A.G. (2009) Ideality Factor of the Current-Voltage Characteristics of p-n-Junctions in the Strong Field of the Microwave. Fizika i Tekhnika Poluprovodnikov-St. Petersburg, 43, 53-57.
[9] Shamirzaev, S.H., Guliamov, G., Dadamirzaev, M.G. and Guliamov, A.G. (2009) Electromotive Force at Rectifying Barrier in Microwave Electromagnetic Field. Uzbek Journal of Physiks Tashkent, 11, 122-127.

  
comments powered by Disqus

Copyright © 2018 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.