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Formation Processes of Zinc Excimer Thin Films Due to Ion-Recombination Processes

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DOI: 10.4236/jamp.2014.27055    3,085 Downloads   3,706 Views  

ABSTRACT

In materials science, the number of d-electrons of transition metals is an essentially important factor controlling characteristics of alloys and compounds. In this paper, we show an example to control the number of d-electrons (holes) by using inner-core electron excitation of zinc atoms. An important feature of our research is that we can make a long lifetime excited electronic state of zinc (3d8), and the life-time of excited zinc is more than 307 days. At first, the experimental apparatus and boundary conditions of the ion-recombination processes were explained. From results of XPS, excited zinc films showed satellites peaks what caused by the final state of 3d8 and the charge transfer final state of 3d10L2. Excited states of zinc were formatted at the surface of substrate caused by ion-recombination process between Zn+ and Zn-. The excited zinc diffused from substrate surface to the surface of the excited zinc thin film. Intensity of excited zinc is proportional to the intensity of electron on the substrate.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Chen, L. , Yamashita, S. , Hamasaki, M. , Manaka, H. and Obara, K. (2014) Formation Processes of Zinc Excimer Thin Films Due to Ion-Recombination Processes. Journal of Applied Mathematics and Physics, 2, 449-456. doi: 10.4236/jamp.2014.27055.

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