[1]
|
Campbell, C.J. (2007) Recent Advances in Telecommunications Avalanche Photodiodes. IEEE Journal of Lightwave Technology, 25, 109-121. http://dx.doi.org/10.1109/JLT.2006.888481
|
[2]
|
McIntyre, R.J. (1966) Multiplication Noise in Uniform Avalanche Diodes. IEEE Transactions on Electron Devices, ED-13,164-168. http://dx.doi.org/10.1109/T-ED.1966.15651
|
[3]
|
Yuan, P., Hansig, C.C., Anselm, A., Lenox, C.C., Nie, H., Holmels, L.A., Streetman, B.G. and Campbell, C.J. (2000) Impact Ionization Characteristics of III-V Semiconductors for a Wide Range of Multiplication Region Thickness. IEEE Journal of Quantum Electronics, 36, 198-204. http://dx.doi.org/10.1109/3.823466
|
[4]
|
Crosslight Software Inc. http://www.crosslight.com/products/apsys.shtml
|
[5]
|
Haralson, J.N., Parks, J.W., Brennan, K.F., Clark, W. and Tarof, L.E. (1997) Numerical Simulation of Avalanche Breakdown within InP-InGaAs SAGCM Standoff Avalanche Photodiodes. IEEE Journal of Lightwave Technology, 15, 2137-2140. http://dx.doi.org/10.1109/50.641534
|
[6]
|
Xiao, Y.G., Li, Z.Q. and Simon Li, Z.M. (2007) Dynamic Drift-Diffusion Simulation of InP/InGaAs SAGCM APD. Physica Ststus Solidi (c), 4, 1641-1645. http://dx.doi.org/10.1002/pssc.200674253
|
[7]
|
Li, N., Sidhu, R., Li, X., Feng, M., Zheng, X., Shuling, W., Karve, G., Demiguel, S., Holmes, A.L. and Campbell, C.J. (2007) InGaAs/InAlAs Avalanche Photodiode with Undepleted Absorber. Applied Physics Letters, 82, 2175-2177.
http://dx.doi.org/10.1063/1.1559437
|