Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

Gang Chen, Song Bai, Yonghong Tao, Yun Li

1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 2Nanjing Electronic Devices Institute, Nanjing, China.
Nanjing Electronic Devices Institute, Nanjing, China.
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China.

DOI: 10.4236/epe.2013.54B243                

Abstract

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm²) with a current gain of I_D/I_G = 19746 at gate bias V_G = 3 V and drain bias V_D = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm². The BV gain is 250 V with V_g from -10 V to -4 V and is 350 V with V_g from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm².

Keywords

4H-SiC; VJFET; Ohmic; Trench; Implant

Conflicts of Interest

The authors declare no conflicts of interest.

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