Electrical Conductivity, Magnetoconductivity and Dielectric Behaviour of (Mg,Ni)-Ferrite below Room Temperature

Somenath Ghatak, Ajit Kumar Meikap, Manika Sinha, Swapan Kumar Pradhan

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Department of Physics, National Institute of Technology, Deemed University, Durgapur, India.

DOI: 10.4236/msa.2010.14028                

Abstract

We report a comprehensive study of electrical transport properties of stoichiometric (Mg,Ni)-ferrite in the temperature range 77 ≤ T ≤ 300K, applying magnetic field upto 1T in the frequency range 20 Hz-1 MHz. After ball milling of MgO, NiO and ?-Fe2O3 and annealing at 1473K, a (Mg,Ni)-ferrite phase is obtained. The temperature dependency of dc resistivity indicates the prevalence of a simple hopping type charge transport in all the investigated samples. The activation energy decreases by annealing the samples by 1473K. The dc magnetoresistivity of the samples is positive, which has been explained by using wave function shrinkage model. The frequency dependence of conductivity has been described by power law and the frequency exponent ‘s’ is found to be anomalous temperature dependent for ball milling and annealing samples. The real part of the dielectric permittivity at a fixed frequency was found to follow the power law ?/(f,T) ? Tn. The magnitude of the temperature exponent ‘n’ strongly depends on milling time and also on annealing temperature. The dielectric permittivity increases with milling and also with annealing. An analysis of the complex impedance by an ideal equivalent circuit indicates that the grain boundary contribution is dominating over the grain contribution in conduction process.

Keywords

Ferrites, Chemical Synthesis, X-Ray Scattering, Transport Properties

Conflicts of Interest

The authors declare no conflicts of interest.

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