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Spin Transfer in EuO:Fe/GaAs Contact

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DOI: 10.4236/jmp.2013.43041    3,021 Downloads   4,920 Views   Citations

ABSTRACT

Spin-wave structures whose current-voltage characteristics are controlled at room temperatures by magnetic field were produced with industrial technological methods using a spintronic europium-monoxide-based thin-film composite as an emitter and monocrystalline semiconductor n-GaAs as a collector. This shows that spin current transport actually exists and that a high-temperature spin transistor was produced with the use of the magnetic semiconductor/nonmagnetic semiconductor contact.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

A. Borukhovich, "Spin Transfer in EuO:Fe/GaAs Contact," Journal of Modern Physics, Vol. 4 No. 3, 2013, pp. 306-310. doi: 10.4236/jmp.2013.43041.

References

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