Impact of phonon-assisted tunneling on electronic conductivity in graphene nanoribbons and oxides ones

Povilas Pipinys, Antanas Kiveris

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DOI: 10.4236/ns.2010.29119                

Abstract

Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent conductivity and I-V characteristics measured by various investigators for graphene nanoribbons and oxides ones. Proposed model describes well not only current dependence on temperature but also the temperature-dependent I-V data using the same set of parameters characterizing material under investigation. The values of active phonons energy and field strength for tunneling are estimated from the fit of current dependence on temperature and I-V/T data with the phonon-assisted tunneling theory.

Keywords

Electronic Transport in Graphene; Phonon-Assisted Tunneling; Electron-Phonon

Conflicts of Interest

The authors declare no conflicts of interest.

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