Local Field Effects in the Luminescence of the Cone-Like Nanohills

Abstract

The main purpose of the work is to clarify the physical mechanisms which leads to the specific spectrums of the structures [1-3]. The work is based on the ideas of the effective susceptibility. The effective susceptibility of cone-shaped nanohills located at the semiconductor surface is obtained in the frame of local-field approach. The knowledge of the effective susceptibility allows to calculate the optical absorption profiles. Using the approach similar to Levshin rule the photoluminescence spectra were calculated. Obtained results were compared with experimental luminescence spectra obtained earlier. The significant machanisms, that define the peculiarities of the spectra, is the shape of the nanoclasters and the inhomogeneity of the nanohills array are justificated. The main issue of the work is that the cause of the luminescence spectrums has electodynamical nature without spatial quantisation effects.

Share and Cite:

Lozovski, V. , Medvid, A. and Piatnytsia, V. (2012) Local Field Effects in the Luminescence of the Cone-Like Nanohills. Optics and Photonics Journal, 2, 145-151. doi: 10.4236/opj.2012.23021.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] A. Medvid, A. Mychko, A. Pludons and Yu. Naseka, “Laser Induced Nanostructure Formation on a Surface of CdZnTe Crystal,” Journal of Nano Research, Vol. 11, 2010, pp 107-112.
[2] A. Medvid, I. Dmitruk, P. Onufrijevs, D. Grabovskis, A. Mychko and I. Pundyk, “Control of Surface Roughness of Si and Ge Single Crystal by Laser Radiation,” JLMN, Vol. 1, No. 3, 2006, pp. 172-175. doi:10.2961/jlmn.2006.03.0004
[3] A. Medvid, I. Dmytruk, P. Onufrijevs and I. Pundyk, “Quantum Confinement Effect in Nanohills Formed on a Surface of Ge by Laser Radiation,” Physica Status Solidi (C), Vol. 4, No. 8, 2007, pp. 3066-3069. doi:10.1002/pssc.200675477
[4] V. Lozovski, “The Effective Susceptibility Concept in the Electrodynamics of Nano-Systems,” Journal of Computational and Theoretical Nanoscience, Vol. 7, No. 10, 2010, pp. 1-17. doi:10.1166/jctn.2010.1588
[5] V. Lozovski, “Susceptibilities of Nano-Particles at the Surface of a Solid,” Physica E: Low-Dimensional Systems and Nanostructures, Vol. 9, No. 4, 2001, pp. 642-651. doi:10.1016/S1386-9477(00)00291-5
[6] W. L. Levshin, “Das Gesetz Der Spiegelkorrespondenz Der Absorption-Und Fluoreszenzspektren,” Zeitschrift Für Physik A Hadrons and Nuclei, Vol. 72, No. 5-6, 1931, pp. 368-381. doi:10.1007/BF01341957
[7] V. L. Levshin, “Svechenie Aktivirovanukh Kristalov,” UFN, Vol. 43, No. 3, 1951, pp. 426-484.
[8] L. B. Freund and H. T. Johnson, “Influence of Strain on Functional Characteristics of Nanoelectronic Devices,” Journal of the Mechanics and Physics of Solids, Vol. 49, No. 9, 2001, pp. 1925-1935. doi:10.1016/S0022-5096(01)00039-4
[9] L. B. Freund and H. T. Johnson, “The Influence of Strain on Confined Electronic States in Semiconductor Quantum Structures,” International Journal of Solids and Structures, Vol. 38, No. 6-7, 2001, pp. 1045-1062.
[10] E. P. O’Reilly, “Valence Band Engineering in StrainedLayer Structures,” Semiconductor Science and Technology, Vol. 4, No. 3, 1989, p. 121. doi:10.1088/0268-1242/4/3/001
[11] E. P. O’Reilly and A. R. Adams, “Band-Structure Engineering in Strained Semiconductor Lasers,” IEEE Journal of Quantum Electronics, Vol. 30, No. 2, 1994, pp. 366379. doi:10.1109/3.283784
[12] L. T. Canham, “Properties of Porous Silicon,” INSPEC, London, 1997.
[13] E. Ghahramani, D. J. Moss and J. E. Sipe, “Linearoptical Properties of Strained (Si)n/(Ge)n Superlattices on (001) Si Substrates,” Physical Review B, Vol. 41, No. 8, 1990, pp. 5112-5125. doi:10.1103/PhysRevB.41.5112
[14] O. Keller, “Local Fields in the Electrodynamics of Mesoscopic Media,” Physics Reports, Vol. 268, No. 2-3, 1996, pp. 85-262. doi:10.1016/0370-1573(95)00059-3
[15] O. Keller and T. Garm, “Intraparticle and Interparticle Radiative Coupling in Quantum Dot Arrays: Influence of a Magnetic Field,” Journal of the Optical Society of America B, Vol. 13, No. 10, 1996, pp. 2121-2128. doi:10.1364/JOSAB.13.002121
[16] R. Poerschke, “Semiconductors Group IV Elements and III-V Compounds,” Springer-Verlag, Berlin, 1991.
[17] R. D. Vengrenovich, B. V. Ivanskii and A. V. Moskalyuk, “Generalized Lifshits—Slezov—Wagner Distribution,” Journal of Experimental and Theoretical Physics, Vol. 104, No. 6, 2007, pp. 906-912. doi:10.1134/S1063776107060088
[18] V. Lozovski and A. Tsykhonya, “Dispersion Properties of Nano-Scale Systems,” International Journal of Theoretical Physics, Vol. 12, No. 3, 2007, pp. 31-51.
[19] V. Chegel, Yu. Chegel, M. D. Guiver, A. Lopatynskyi, O. Lopatynska and V. Lozovski, “3D-Quantification of Biomolecular Covers Using Surface Plasmon-Polariton Resonance Experiment,” Sensors and Actuators B, Vol. 134, No. 1, 2008, pp. 66-71. doi:10.1016/j.snb.2008.04.012
[20] I. Iezhokin, O. Keller and V. Lozovski, “Influence of Local Field on Spontaneous Light Emission by Nanoparticles,” Ukrainian Journal of Physics, Vol. 54, No. 4, 2009, pp. 398-406.
[21] T. G. Meister, “Electronnye Spectry Mnogoatomnykh Molekul,” LGU, Leningrad, 1969.

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.