Fast CR-SRAM Using New Charge-Recycling Scheme

Leilei Li, Xin Chen, Xu Wang

School of Electronics and Information, Tongji University, Shanghai, China.
School of Microelectronics, Shanghai Jiao Tong University, Shanghai, China.

DOI: 10.4236/eng.2012.48064                

Abstract

In this paper, a CR-SRAM using new charge recycling scheme is described, novel bit-line pre-charge voltage distribution is proposed. The SRAM pre-charge voltage level is designed by logarithm instead of linear. The new design leads to improvement in speed compared to the original CR-SRAM. Simulation results show that the new CR-SRAM using novel pre-charge voltage distribution scheme reduced the write access time by 34% with 9% power dissipation penalty.

Keywords

SRAM; Lower-Power; Charge-Recycling

Conflicts of Interest

The authors declare no conflicts of interest.

References

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