[1]
|
W. G?tz, G. Pensl and W. Zulehner, “Observation of Five Additional Thermal Donor Species TD12 to TD16 and of Regrowth of Thermal Donors at Initial Stages of the New Oxygen Donor Formation in Czochralski-Grown Silicon,” Physical Review B, Vol. 46, No. 7, 1992, pp. 4312-4315. doi:10.1103/PhysRevB.46.4312
|
[2]
|
M. Pesola, J. von Boehm, T. Mattila and R. Nieminen, “Computational Study of Interstitial Oxygen and Vacancy-Oxygen Complexes in Silicon,” Physical Review B, Vol. 60, No. 16, 1999, pp. 11449-11463. doi:10.1103/PhysRevB.60.11449
|
[3]
|
J. Coutinho, R. Jones, P. R. Briddon and S. ?berg, “Oxygen and Dioxygen Centers in Si and Ge: Density- Functional Calculations,” Physical Review B, Vol. 62, No. 16, 2000, pp. 10824-10840. doi:10.1103/PhysRevB.62.10824
|
[4]
|
W. M. Bullis, M. Watanabe, A. Baghdadi, Y. Z. Li, R. I. Scace, R. W. Series and P. Stallhofer, “Semiconductor Silicon/1986,” In: H. R. Huff, T. Abe and B. Kolbesen, Eds., The Electrochemical Society Softbound Proceedings Series, The Electrochemical Society, Pennington, 1986, p. 166.
|
[5]
|
M. Pesola, J. von Boehm and R. Nieminen, “Vibrations of the Interstitial Oxygen Pairs in Silicon,” Physical Review Letter, Vol. 82, No. 20, 1999, pp. 4022-4025. doi:10.1103/PhysRevLett.82.4022
|
[6]
|
W. G?tz, G. Pensl, W. Zulehner, R. Newman and S. McQuaid, “Thermal Donor Formation and Annihilation at Temperatures above 500??C in Czochralski-Grown Si,” Journal of Applied Physics, Vol. 84, No. 7, 1998, pp. 3561-3568.
|
[7]
|
J. Lindstr?m, T. Hallberg, J. Hermansson, L. Murin, B. Komarov, V. Markevich, M. Kleverman and B. G. Svensson, “Interaction between Self-Interstitials and the Oxygen Dimer in Silicon,” Physica B, Vol. 308-310, 2001, p. 284. doi:10.1016/S0921-4526(01)00694-9
|
[8]
|
D. Aberg, B. Svensson, T. Hallberg and J. Lindstr?m, “Kinetic Study of Oxygen Dimer and Thermal Donor Formation in Silicon,” Physical Review B, Vol. 58, No. 19, 1998, pp. 12944-12951. doi:10.1103/PhysRevB.58.12944
|
[9]
|
L. Murin, T. Hallberg, V. Markevich and J. Lindstr?m, “Experimental Evidence of the Oxygen Dimer in Silicon,” Physical Review Letter, Vol. 80, No. 1, 1998, pp. 93-96. doi:10.1103/PhysRevLett.80.93
|
[10]
|
Y. J. Lee, J. von Boehm and R. M. Nieminen, “Simulation of the Kinetics of Oxygen Complexes in Silicon,” Physical Review B, Vol. 66, No. 16, 2002, pp. 165221- 165232. doi:10.1103/PhysRevB.66.165221
|
[11]
|
Y. J. Lee, J. von Boehm, M. Pesola and R. Nieminen, “First Principles Study of Migration Restructuring, and Dissociation Energies of Oxygen Complexes in Silicon,” Physical Review B, Vol. 65, No. 8, 2002, Article ID: 085205. doi:10.1103/PhysRevB.65.085205
|
[12]
|
Y. J. Lee, J. von Boehm, M. Pesola and R. Nieminen, “Comparison of Oxygen-Chain Models for Late Thermal Double Donors in Silicon,” Applied Physics Letter, Vol. 82, No. 13, 2003, pp. 2094-2096. doi:10.1063/1.1563813
|
[13]
|
L. Murin, J. Lindstr?m, V. Markevich, A. Misiuk and C. Londos, “Thermal Double Donor Annihilation and Oxygen Precipitation at around 650?C in Czochralski-Grown Si: Local Vibrational Mode Studies,” Journal of Physics: Condensed Matter, Vol. 17, 2005, pp. 2237-2246. doi:10.1088/0953-8984/17/22/011
|
[14]
|
O. Prakash, N. Upreti and S. Singh, “Behaviour of Oxygen in CZ-Silicon during 430℃ - 630℃ Heat Treatment,” Materials Science and Engineering B, Vol. 52, No. 2-5, 1998, pp. 180-184.
|
[15]
|
M. Pesola, J. von Boehm and R. Nieminen, “Structures of Thermal Double Donors in Silicon,” Physical Review Letters, Vol. 84, No. 23, 2000, pp. 5343-5346. doi:10.1103/PhysRevLett.84.5343
|
[16]
|
S. Oberg, C. Ewels, R. Jones, T. Hallberg, J. Lindstrom, L. Murin and P. R. Briddon, “First Stage of Oxygen Aggregation in Silicon: The Oxygen Dimer,” Physical Review Letter, Vol. 81, No. 14, 1998, pp. 2930-2933. doi:10.1103/PhysRevLett.81.2930
|
[17]
|
V. V. Voronkov and R. Falster, “Latent Complexes of Interstitial Boron and Oxygen Dimers as a Reason for Degradation of Silicon-Based Solar Cells,” Journal of Applied Physics, Vol. 107, No. 5, 2010, pp. 53509-53520. doi:10.1063/1.3309869
|
[18]
|
L. I. Murin, E. A. Tolkacheva, V. P. Markevich, A. R. Peaker, B. Hamilton, E. Monakhov, B. G. Svensson, J. L. Lindstr?m, P. Santos, J. Coutinho and A. Carvalho, “The Oxygen Dimer in Si: Its Relationship to the Light-Induced Degradation of Si Solar Cells?” Applied Physics Letters, Vol. 98, No. 18, 2011, pp. 182101-182103. doi:10.1063/1.3584138
|