Share This Article:

Unrelaxed State in Epitaxial Heterostructures Based on Lead Selenide

Abstract Full-Text HTML Download Download as PDF (Size:915KB) PP. 502-510
DOI: 10.4236/jmp.2012.36068    2,354 Downloads   4,501 Views   Citations

ABSTRACT

The work deals with the epitaxial PbSe layers grown on the KCl substrates by the method of “hot-wall” molecular epitaxy over the range of layer thicknesses of 20 - 2000 nm. Special emphasis is put on the values of elastic deformations that could be generated and frozen in epitaxial layers with the aim of influencing their energy spectra and optical properties. The maximum deformation at layers tension made up 57% of the initial mismatch between the layer and the substrate (ε = Δa/a = 0.015). In such a solid-state structure effective “negative” pressure is realized, which is justified by increase in the tangential lattice constant and the forbidden gap width. This width correlates with the tangential lattice constant (deformation) and corresponds to certain values of definite frequencies of direct electron transitions across the forbidden gap.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

A. Pashaev, O. Davarashvili, Z. Akhvlediani, M. Enukashvili, R. Gulyaev and V. Zlomanov, "Unrelaxed State in Epitaxial Heterostructures Based on Lead Selenide," Journal of Modern Physics, Vol. 3 No. 6, 2012, pp. 502-510. doi: 10.4236/jmp.2012.36068.

References

[1] A. M. Pashaev, O. I. Davarashvili, V. A. Aliyev, M. I. Enukashvili and V. P. Zlomanov, “The Effect of Deformations on the Change in the Forbidden Gap Width in Epitaxial Layers of the IV-VI Semiconductors,” Georgian Engineering News, Vol. 13, No. 3, 2008, pp. 53-55.
[2] B. N. Volkov, L. I. Ryabova and D. R. Khokhlov, “Impurities with Variable Valence in Solid Solutions on the Base of Lead Telluride,” Uspekhi Physicheskikh Nauk, Vol. 152, No. 1, 2002, pp. 1-68.
[3] O. I. Davarashvili, A. M. Pashaev, M. I. Enukashvili and M. A. Dzagania, “Supercritical Nanostructures on the Base of IV-VI Semiconductors,” Book of Abstracts of International Symposium on Modern Problems of Surface Physics and Chemistry, 2010, pp. 147-148.
[4] O. I. Davarashvili, R. G. Gulyaev, M. I. Enukashvili and M. A. Dzagania, “Residual Elastic Deformations in Lead Selenide under ‘Negative’ Pressure,” Bulletin of the Georgian National Academy of Sciences, Vol. 36, No. 3, 2010, pp. 312-315.
[5] M. V. Valeiko, I. I. Zasavitski, B. N. Matsonashvili, Z. A. Rukhadze and A. V. Shirokov, “Quantum-Size and Deformation Effects in the Structures Based on PbSe/ Pb1-xEuxSe Grown by the Method of Molecular-Beam Epitaxy,” Physika i Technika Poluprovodnikov, Vol. 24, No. 8, 1990, pp. 1437-1443.
[6] G. G. Gegiadze, R. G. Gulyaev, O. I. Davarashvili, M. I. Enukashvili and M. A. Dzagania, “Investigation of the Epitaxial Layers of Lead Selenide at Different Degrees of Deformation,” Bulletin of the Georgian National Academy of Sciences, Vol. 36, No. 1, 2010, pp. 42-44.
[7] Z. G. Akhvlediani, L. P. Bychkova, O. I. Davarashvili, M. I. Enukashvili and M. A. Dzagania, “Optical IR Transmission Spectra of Thin Epitaxial Lead Selenide Layers,” Book of Abstracts of International Conference on Functional Materials and Nanotechnologies, 2011, p. 272.
[8] E. D. Palik, D. L. Mitchell and J. N. Zemel, “Magneto-Optical Studies of the Band Structure of PbS,” Physical Review, Vol. 135, No. 3A, 1964, pp. A763-A778. doi:10.1103/PhysRev.135.A763
[9] B. A. Volkov, I. V. Kucherenko, M. S. Taktakishvili and A. P. Shotov, “The Valence Band Structure in p-Pb0.94- Sn0.06Se,” Physika i Technika Poluprovodnikov, Vol. 8, No. 12, 1974, pp. 2346-2349.
[10] I. V. Kucherenko and A. P. Shotov, “Determination of the Band Structure Parameters in the Pb1-xSnxSe Crystals by the Measusurements of Thermal E.M.F in Strong Magnetic Fields,” Physika i Technika Poluprovodnikov, Vol. 12, No. 9, 1978, pp. 1807-1811.
[11] S. Prabahar, N. Suryanarayanan, K. Rajasekar and S. Srikanth, “Lead Selenide Thin Films from Vacuum Evaporation Method: Structural and Optical Properties,” Chalcogenide Letters, Vol. 6, No. 5, 2009, pp. 203-211.
[12] Y. I. Ukhanov, “Optical Properties of Semiconductors,” Nauka, Moscow, 1977.
[13] W. W. Scanlon, “Intrinsic Optical Absorption and the Radiative Recombination Lifetime in PbS,” Physical Review, Vol. 109, No. 1, 1958, pp. 47-50. doi:10.1103/PhysRev.109.47
[14] O. I. Davarashvili, L. M. Dolginov, P. G. Eliseev, I. I. Zasavitski and A. P. Shotov, “Multicomponent Solid Solutions of the IV-VI Compounds,” Kvantovaya Electronica, Vol. 4, No. 4, 1977, pp. 904-907.

  
comments powered by Disqus

Copyright © 2019 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.