Effect of Chamber Conditions and Substrate Type on PECVD of SiGeSn Films

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Crystal Structure Theory and Applications

ISSN Print: 2169-2491
ISSN Online: 2169-2505
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"Effect of Chamber Conditions and Substrate Type on PECVD of SiGeSn Films"
written by Venkat Hariharan, Jignesh Vanjaria, Arul Chakkaravarthi Arjunan, Gary S. Tompa, Hongbin Yu,
published by Crystal Structure Theory and Applications, Vol.10 No.3, 2021

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[1]	Obtaining semiconductor structures Si-Si_1-xGe_x-Si_1-x-yGe_xSn_y from the liquid phase in a single technological cycle Functional Materials, 2022 DOI:10.15407/fm29.02.202