"Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements"
written by M. Charfeddine, Malek Gassoumi, H. Mosbahi, C. Gaquiére, M. A. Zaidi, H. Maaref,
published by Journal of Modern Physics, Vol.2 No.10, 2011
has been cited by the following article(s):
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[1] ВЛИЯНИЕ ПРОЦЕССА СТРУКТУРНОЙ РЕЛАКСАЦИИ В HEMT НА ОСНОВЕ НИТРИД-ГАЛЛИЕВЫХ ГЕТЕРОСТРУКТУР НА ИХ ЧАСТОТНЫЕ ХАРАКТЕРИСТИКИ
2018
[2] Novel CV measurements based method for the extraction of GaN buffer layer residual doping level in HEMT
2017
[3] Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology
Semiconductor Science and Technology, 2017
[4] Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer
2017
[5] High-speed solar-blind UV photodetectors using high-Al content Al0. 64Ga0. 36N/Al0. 34Ga0. 66N multiple quantum wells
Applied Physics Express, 2016
[6] Modelling of mHEMT InAlN/GaN Double Gate Performance
Electrotehnica, Electronica, Automatica, 2015
[7] Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs
Journal of Alloys and Compounds, 2015
[8] Modelling of mHEMT InAlN/GaN Double Gate Performance.
2015
[9] Effects of post-annealing on the passivation interface characteristics of AlGaN/GaN high electron mobility transistors
Materials Science in Semiconductor Processing, 2015
[10] Characterisation of the effect of surface passivation with SiO 2/SiN on deep levels in AlGaN/GaN/Si HEMTs
Journal of Alloys and Compounds, 2015
[11] Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors
2015
[12] Using vertical capacitance–voltage measurements for fast on‐wafer characterization of epitaxial GaN‐on‐Si material
physica status solidi (a), 2015
[13] Właściwości i zastosowania tranzystorów HEMT na bazie azotku galu
2015
[14] Analysis of Thermal Effects on Electrical Characterization of AlGaN/GaN/Si FAT-HEMTs
Silicon, 2015
[15] Deep Levels in InGaN/GaN-LEDs
2015
[16] Effect of access region and field plate on capacitance behavior of GaN HEMT
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on, 2015
[17] Deep traps in GaN-based structures as affecting the performance of GaN devices
Materials Science and Engineering: R: Reports, 2015
[18] Electrical Characterization of GaN
2014
[19] Electrical Characterization of GaN.
PIERS Proceedings, 2014
[20] Characterization and comparison between Ig (Vgs) structures HEMT AlInN/GaN and AlGaN/GaN
Optical and Quantum …, 2014
[21] Current-Voltage-Temperature (IVT) Characteristics of Schottky-Gate of the Structures AlGaN/GaN HEMTs
2014
[22] Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions
Journal of Vacuum Science & Technology B, 2014
[23] a-Si: H-Silicon Hybrid Low Energy X-ray Detector
2014
[24] Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE
physica status solidi (c), 2013
[25] Numerical Investigation of Kink Effect Correlated with Defects in AlGaN/GaN High Electron Mobility Transistors
Journal of Computational and Theoretical Nanoscience, 2013
[26] Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE
2013