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Low temperature epitaxial technology for GaN-based materials
Chinese Science Bulletin,
2023
DOI:10.1360/TB-2022-0653
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[2]
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Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature
Journal of Vacuum Science & Technology A,
2023
DOI:10.1116/6.0002718
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[3]
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Low temperature epitaxial technology for GaN-based materials
Chinese Science Bulletin,
2022
DOI:10.1360/TB-2022-0653
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[4]
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Growth Optimization of Nonpolar Al
0.7
Sc
0.3
N(112¯0)/Al
2
O
3
(11¯02) Thin Films Using Reactive Magnetron Sputter Epitaxy
physica status solidi (a),
2022
DOI:10.1002/pssa.202200380
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[5]
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Growth Optimization of Nonpolar Al
0.7
Sc
0.3
N(112¯0)/Al
2
O
3
(11¯02) Thin Films Using Reactive Magnetron Sputter Epitaxy
physica status solidi (a),
2022
DOI:10.1002/pssa.202200380
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[6]
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Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets
Applied Sciences,
2021
DOI:10.3390/app11156990
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[7]
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120 MeV Ag ion irradiation induced intermixing, grain fragmentation in HfO2/GaOx thin films and consequent effects on the electrical properties of HfO2/GaOx/Si-based MOS capacitors
Radiation Effects and Defects in Solids,
2020
DOI:10.1080/10420150.2020.1718140
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[8]
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Characterization of Amorphous GaN Thin Films after Conventional Thermal Anneal
2020 IEEE International Conference on Semiconductor Electronics (ICSE),
2020
DOI:10.1109/ICSE49846.2020.9166900
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[9]
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Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition
Materials Science Forum,
2019
DOI:10.4028/www.scientific.net/MSF.971.79
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[10]
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Processing and characterization of a free-standing bulk polycrystalline GaN layer
Journal of Alloys and Compounds,
2018
DOI:10.1016/j.jallcom.2018.07.251
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