A High Power-Added-Efficiency 2.5-GHz Class-F Power Amplifier Using 0.5 μm GaN on SiC HEMT Technology

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ISSN Print: 2327-5219
ISSN Online: 2327-5227
www.scirp.org/journal/jcc
E-mail: jcc@scirp.org

"A High Power-Added-Efficiency 2.5-GHz Class-F Power Amplifier Using 0.5 μm GaN on SiC HEMT Technology"
written by Chia-Han Lin, Hsien-Chin Chiu, Min-Li Chou, Hsiang-Chun Wang, Ming-Feng Huang,
published by Journal of Computer and Communications, Vol.4 No.3, 2016

has been cited by the following article(s):

[1]	RADIO FREQUENCY POWER AMPLIFIER FOR RADAR AND PORTABLE COMMUNICATION SYSTEMS
	2019

[2]	A Review of Highly Efficient Class F Power Amplifier Design Technique in Gigahertz Frequencies
	2017

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