"Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination"
written by Gokhan Sahin, Moustapha Dieng, Mohamed Abderrahim Ould El Moujtaba, Moussa Ibra Ngom, Amary Thiam, Grégoire Sissoko,
published by Journal of Applied Mathematics and Physics, Vol.3 No.11, 2015
has been cited by the following article(s):
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[2] Effect of the depth base along the vertical on the electrical parameters of a vertical parallel silicon solar cell in open and short circuit
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[3] Effect of temperature of a vertical parallel silicon solar cell under photo-thermal conditions
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[4] Available online www. jsaer. com
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[6] Performance of conversion efficiency of a crystalline silicon solar cell with base doping density
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[7] Minority Carrier Diffusion Coefficient D*(B, T): Study in Temperature on a Silicon Solar Cell under Magnetic Field
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[8] Effect of Incidence Angle on Capacitance of Vertical Parallel Silicon Solar Cell under Modulation Frequency
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[9] Effect of temperature on the series and shunt resistance of a silicon solar cell under frequency modulation
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[10] Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain
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[11] Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light
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[12] Effect of incidence angle on the electrical parameters of vertical parallel junction silicon solar cell under frequency domain
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[13] Effect of junction recombination velocity of electrical parameters of a vertical parallel silicon solar cell under frequency modulation
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[14] Geniş Sekturumlu Aydınlatma altında İki Yüzeyli Silikon Güneş Pilinin Difüzyon Kapasitansı ve Aşırı Azınlık Taşıyıcı Yoğunluğu
Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2016