"
Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate"
written by Sonachand Adhikari, Saroj Kanta Patra, Ashok Lunia, Sandeep Kumar, Priyavart Parjapat, Bhoopendra Kushwaha, Pawan Kumar, Sumitra Singh, Ashok Chauhan, Kuldip Singh, Suchandan Pal, C. Dhanavantri,
published by
Journal of Applied Mathematics and Physics,
Vol.2 No.12, 2014
has been cited by the following article(s):
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[1]
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GaN film optical nonlinearity: wavelength dependent refractive index for All-Optical switching application
Optics & Laser Technology,
2023
DOI:10.1016/j.optlastec.2023.109642
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[2]
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Crystal Phase Control of ε-Ga2O3 Fabricated using by Metal-Organic Chemical Vapor Deposition
Journal of the Korean Physical Society,
2019
DOI:10.3938/jkps.74.502
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[3]
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Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED
IOP Conference Series: Materials Science and Engineering,
2018
DOI:10.1088/1757-899X/331/1/012008
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[4]
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Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well
physica status solidi (b),
2017
DOI:10.1002/pssb.201600461
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