|
[1]
|
The effect of the surface morphology of the aluminium oxide layer on the physical and bacterial attachment behavior
Surface Topography: Metrology and Properties,
2023
DOI:10.1088/2051-672X/acc59d
|
|
|
|
|
[2]
|
Effect of Co-fed Water on a Co–Pt–Si/γ-Al2O3 Fischer–Tropsch Catalyst Modified with an Atomic Layer Deposited or Molecular Layer Deposition Overcoating
ACS Omega,
2022
DOI:10.1021/acsomega.1c06512
|
|
|
|
|
[3]
|
Use of plasma oxidation for conversion of metal salt infiltrated thin polymer films to metal oxide
Journal of Physics D: Applied Physics,
2022
DOI:10.1088/1361-6463/ac8e12
|
|
|
|
|
[4]
|
Effect of Co-fed Water on a Co–Pt–Si/γ-Al2O3 Fischer–Tropsch Catalyst Modified with an Atomic Layer Deposited or Molecular Layer Deposition Overcoating
ACS Omega,
2022
DOI:10.1021/acsomega.1c06512
|
|
|
|
|
[5]
|
Boosting Catalytic Lifetime in Chemical Vapor Deposition of Carbon Nanotubes by Rapid Thermal Pretreatment of Alumina-Supported Metal Nanocatalysts
Chemistry of Materials,
2021
DOI:10.1021/acs.chemmater.0c04692
|
|
|
|
|
[6]
|
Boosting Catalytic Lifetime in Chemical Vapor Deposition of Carbon Nanotubes by Rapid Thermal Pretreatment of Alumina-Supported Metal Nanocatalysts
Chemistry of Materials,
2021
DOI:10.1021/acs.chemmater.0c04692
|
|
|
|
|
[7]
|
Comparison of the Growth and Thermal Properties of Nonwoven Polymers after Atomic Layer Deposition and Vapor Phase Infiltration
Coatings,
2021
DOI:10.3390/coatings11091028
|
|
|
|
|
[8]
|
3-D Vertical via Nitrogen-Doped Aluminum Oxide Resistive Random-Access Memory
IEEE Transactions on Electron Devices,
2021
DOI:10.1109/TED.2021.3075193
|
|
|
|
|
[9]
|
Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes
Semiconductor Science and Technology,
2021
DOI:10.1088/1361-6641/abdbc3
|
|
|
|
|
[10]
|
Catalyst Deactivation by Carbon Deposition: The Remarkable Case of Nickel Confined by Atomic Layer Deposition
ChemCatChem,
2021
DOI:10.1002/cctc.202100109
|
|
|
|
|
[11]
|
The Effect of Atomic Layer Deposited Overcoat on Co-Pt-Si/γ-Al2O3 Fischer–Tropsch Catalyst
Catalysts,
2021
DOI:10.3390/catal11060672
|
|
|
|
|
[12]
|
Growth of Ultrathin Al2O3 islands on hBN Particles by Atomic Layer Deposition in a Custom Fluidized Bed Reactor Using Al(CH3)3 and H2O
Applied Surface Science,
2020
DOI:10.1016/j.apsusc.2020.147665
|
|
|
|
|
[13]
|
Quantifying the Extent of Ligand Incorporation and the Effect on Properties of TiO2 Thin Films Grown by Atomic Layer Deposition Using an Alkoxide or an Alkylamide
Chemistry of Materials,
2020
DOI:10.1021/acs.chemmater.9b03621
|
|
|
|
|
[14]
|
Mapping Graphene Grain Orientation by the Growth of WS2 Films with Oriented Cracks
Chemistry of Materials,
2020
DOI:10.1021/acs.chemmater.0c02551
|
|
|
|
|
[15]
|
Quantifying the Extent of Ligand Incorporation and the Effect on Properties of TiO2 Thin Films Grown by Atomic Layer Deposition Using an Alkoxide or an Alkylamide
Chemistry of Materials,
2020
DOI:10.1021/acs.chemmater.9b03621
|
|
|
|
|
[16]
|
Mapping Graphene Grain Orientation by the Growth of WS2 Films with Oriented Cracks
Chemistry of Materials,
2020
DOI:10.1021/acs.chemmater.0c02551
|
|
|
|
|
[17]
|
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
Crystal Growth & Design,
2019
DOI:10.1021/acs.cgd.8b01375
|
|
|
|
|
[18]
|
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
Crystal Growth & Design,
2019
DOI:10.1021/acs.cgd.8b01375
|
|
|
|
|
[19]
|
Atomic Layer Deposited TiO2 and Al2O3 Thin Films as Coatings for Aluminum Food Packaging Application
Materials,
2019
DOI:10.3390/ma12040682
|
|
|
|
|
[20]
|
Investigation of annealed, thin(∼2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies
Materials Research Express,
2019
DOI:10.1088/2053-1591/ab37df
|
|
|
|
|
[21]
|
Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS
Journal of Physics D: Applied Physics,
2018
DOI:10.1088/1361-6463/aaa9a1
|
|
|
|
|
[22]
|
Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO2 films
IOP Conference Series: Materials Science and Engineering,
2018
DOI:10.1088/1757-899X/310/1/012125
|
|
|
|
|
[23]
|
Effect of post deposition annealing and post metallization annealing on electrical and structural characteristics of Pd/Al2O3/6H-SiC MIS capacitors
Microelectronics International,
2018
DOI:10.1108/MI-10-2016-0070
|
|
|
|
|
[24]
|
Effect of Sm doping and annealing on magnetic and structural properties of sputter deposited SnO2 thin films
Materials Research Express,
2018
DOI:10.1088/2053-1591/aaba0b
|
|
|
|
|
[25]
|
Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
Journal of Vacuum Science & Technology A,
2018
DOI:10.1116/1.5035422
|
|
|
|
|
[26]
|
Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
2018
DOI:10.1116/1.5035422
|
|
|
|
|
[27]
|
High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
2017
DOI:10.1116/1.4967307
|
|
|
|
|
[28]
|
Decoupling the Effects of Mass Density and Hydrogen-, Oxygen-, and Aluminum-Based Defects on Optoelectronic Properties of Realistic Amorphous Alumina
The Journal of Physical Chemistry Letters,
2017
DOI:10.1021/acs.jpclett.7b00896
|
|
|
|
|
[29]
|
Statistics-Based Analysis of the Evolution of Structural and Electronic Properties of Realistic Amorphous Alumina During the Densification Process: Insights from First-Principles Approach
The Journal of Physical Chemistry C,
2017
DOI:10.1021/acs.jpcc.7b06887
|
|
|
|
|
[30]
|
Density of Nanometrically Thin Amorphous Films Varies by Thickness
Chemistry of Materials,
2017
DOI:10.1021/acs.chemmater.7b01139
|
|
|
|
|
[31]
|
High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
2017
DOI:10.1116/1.4967307
|
|
|
|
|
[32]
|
Density of Nanometrically Thin Amorphous Films Varies by Thickness
Chemistry of Materials,
2017
DOI:10.1021/acs.chemmater.7b01139
|
|
|
|
|
[33]
|
Statistics-Based Analysis of the Evolution of Structural and Electronic Properties of Realistic Amorphous Alumina During the Densification Process: Insights from First-Principles Approach
The Journal of Physical Chemistry C,
2017
DOI:10.1021/acs.jpcc.7b06887
|
|
|
|
|
[34]
|
Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics
Applied Physics Express,
2017
DOI:10.7567/APEX.10.106502
|
|
|
|
|
[35]
|
Decoupling the Effects of Mass Density and Hydrogen-, Oxygen-, and Aluminum-Based Defects on Optoelectronic Properties of Realistic Amorphous Alumina
The Journal of Physical Chemistry Letters,
2017
DOI:10.1021/acs.jpclett.7b00896
|
|
|
|
|
[36]
|
Influences of annealing on structural and compositional properties of Al2O3thin films grown on 4H–SiC by atomic layer deposition
Chinese Physics B,
2016
DOI:10.1088/1674-1056/25/12/128104
|
|
|
|
|
[37]
|
Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
Journal of Astronomical Telescopes, Instruments, and Systems,
2015
DOI:10.1117/1.JATIS.1.4.044002
|
|
|
|