"
Quantum Supercurrent Transistors in Silicon Quantum Wells Confined by Superconductor Barriers"
written by Nikolay T. Bagraev, Edward Yu. Danilovsky, Leonid E. Klyachkin, Andrei A. Kudryavtsev, Roman V. Kuzmin, Anna M. Malyarenko, Wolfgang Gehlhoff, Vladimir V. Romanov,
published by
Journal of Modern Physics,
Vol.2 No.4, 2011
has been cited by the following article(s):
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[1]
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Phase inversion of THz radiation from silicon nanostructures
Journal of Physics: Conference Series,
2019
DOI:10.1088/1742-6596/1326/1/012005
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[2]
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Terahertz emission from silicon nanostructures heavily doped with boron
Journal of Physics: Conference Series,
2014
DOI:10.1088/1742-6596/486/1/012017
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[3]
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Terahertz emission from quantum-sized silicon p+ - n junctions
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),
2013
DOI:10.1109/IRMMW-THz.2013.6665776
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[4]
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Features of the electroluminescence spectra of quantum-confined silicon p +-n heterojunctions in the infrared spectral region
Semiconductors,
2013
DOI:10.1134/S1063782613110067
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[5]
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Correlation Between Arrhenius Equation and Binding Energy by X-ray Photoelectron Spectroscopy
Transactions on Electrical and Electronic Materials,
2013
DOI:10.4313/TEEM.2013.14.6.329
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