"Extendibility Evaluation of Industrial EUV Source Technologies for kW Average Power and 6.x nm Wavelength Operation"
written by Akira Endo,
published by Journal of Modern Physics, Vol.5 No.5, 2014
has been cited by the following article(s):
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[2] Free-electron laser emission architecture impact on EUV lithography
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[3] kW-class picosecond thin-disc prepulse laser Perla for efficient EUV generation
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[4] Advances in High-Power, Ultrashort Pulse DPSSL Technologies at HiLASE
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[5] Free-electron laser emission architecture impact on extreme ultraviolet lithography
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[6] EUV Free-Electron Laser Requirements for Semiconductor Manufacturing
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[7] Theory: electron-induced chemistry
Materials and Processes for Next Generation Lithography, 2016
[8] Development and Metrology of Extreme Ultraviolet and soft X-ray Multilayer Mirrors
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[9] Considerations for a free-electron laser-based extreme-ultraviolet lithography program
SPIE Advanced Lithography, 2015
[10] Status and Potential of Laser based EUV Sources
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[11] Spectroscopy of highly charged ions and its relevance to EUV and soft x-ray source development
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