"Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis"
written by A. Guen-Bouazza, C. Sayah, B. Bouazza, N. E. Chabane-Sari,
published by Journal of Modern Physics, Vol.4 No.5, 2013
has been cited by the following article(s):
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[1] Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods
Journal of Electronic Materials, 2018
[2] In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications
2017
[3] \(\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}\) composite-channel double-gate (DG)-HEMT devices for high-frequency applications
Journal of Computational Electronics, 2017
[4] $ $\hbox {In} _ {0.7}\hbox {Ga} _ {0.3}\hbox {As}/\hbox {InAs}/\hbox {In} _ {0.7}\hbox {Ga} _ {0.3}\hbox {As} $ $ In0. 7Ga0. 3As/InAs/In0. 7Ga0. 3As composite-channel …
Journal of Computational Electronics, 2017
[5] $ $\hbox {In} _ {0.7}\hbox {Ga} _ {0.3}\hbox {As}/\hbox {InAs}/\hbox {In} _ {0.7}\hbox {Ga} _ {0.3}\hbox {As} $ $ In0. 7Ga0. 3As/InAs/In0. 7Ga0. 3As composite-channel …
Journal of Computational Electronics, 2017
[6] In0. 7Ga0. 3As/InAs/In0. 7Ga0. 3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications
2017
[7] Electronic Transport Properties in Bulk ZnO and Zn1− xMgxO Using Monte Carlo Simulation
2015
[8] Electronic Transport Properties in Bulk ZnO and Zn1-xMgxO Using Monte Carlo Simulation
Global Journal of Science Frontier Research, 2015
[9] Steady-state and transient electron transport in bulk ZnO and Zn
2015
[10] Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy
Applied Physics Letters, 2014
[11] Steady-State and Transient Electron Transport in Bulk ZnO and Zn1-xMgxO Semiconductors
F Nofeli, H Arabshahi, MH Tayarani - erpublication.org, 2014
[12] Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan
Applied Physics Letters, 2014
[13] Steady-State and transient electron transport in bulk ZnO and Zn1-xMgxO semiconductors'
2014