Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

Journals Menu

Follow SCIRP

	+1 323-425-8868
	customer@scirp.org
	+86 18163351462(WhatsApp)
	1655362766

	Paper Publishing WeChat

Wireless Engineering and Technology

ISSN Print: 2152-2294
ISSN Online: 2152-2308
www.scirp.org/journal/wet
E-mail: wet@scirp.org

Google-based Impact Factor: 2.09
Citations h5-index & Ranking*

Journals Menu

"Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology"
written by Viranjay M. Srivastava,
published by Wireless Engineering and Technology, Vol.1 No.2, 2010

has been cited by the following article(s):

Google Scholar
CrossRef

[1]	Class-B Power Amplifier with Si-Based Double-Gate MOSFET: A Circuit Perspective
	Key Engineering Materials, 2022

[2]	Design and performance analysis of SiO2-MOSFET based absorber for reflected RF signal
	Materials Today: Proceedings, 2022

[3]	Design and analysis of MOSFET based absorber for 5G massive MIMO base station.
	2021

[4]	Third order band pass filter with double-gate MOSFET: A circuit perspective
	2021

[5]	Compact Noise Modeling Approach in Nano-scaled CSDG MOSFET for RF Switch
	2021

[6]	Third Order Band Pass Filter With Double-Gate MOSFET: A Simulation Perspective
	2021

[7]	Fabrication of a novel RF switch device with high performance using Ino. 4Gao. 6As MOSFET technology
	半导体学报: 英文版, 2016

[8]	Fabrication of a novel RF switch device with high performance using In 0.4 Ga 0.6 As MOSFET technology
	半导体学报, 2016

[9]	Fabrication of a novel RF switch device with high performance using In0. 4Ga0. 6As MOSFET technologyProject supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).
	Journal of Semiconductors, 2016

[10]	Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET
	MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch. Springer International Publishing, 2014

[11]	Explicit model of cylindrical surrounding double-gate MOSFETs
	WSEAS Trans. on Circuits and Systems, 2013

[12]	Explicit model of cylindrical surrounding double-gate MOSFET
	2013

[13]	Advancement of MOSFET with the application of hafnium
	Computer Communication and Informatics (ICCCI), 2012 International Conference on. IEEE, 2012., 2012

[14]	Analysis of drain current and switching speed for SPDT switch and DPDT switch with the proposed DP4T RF CMOS switch
	Journal of Circuits, Systems, and Computers, 2012

[15]	Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology
	Journal of computational electronics, Springer, 2011

[16]	Drain current and switching speed of the Double-Pole Four-Throw RF CMOS switch
	India Conference (INDICON), 2011 Annual IEEE. IEEE, 2011., 2011

[17]	An approach for the design of Cylindrical Surrounding Double-Gate MOSFET
	Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on. IEEE, 2011

[18]	Possibilities of HfO 2 for Double-Pole Four-Throw Double-Gate RF CMOS switch
	Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on. IEEE, 2011

[19]	Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch–A Review
	Wireless Sensor Network, 2011

[20]	Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch
	Int'l J. of Communications, Network and System Sciences, 2011

[21]	Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch-A Review
	Wireless Sensor Network, 2011

[22]	Possibilities of HfO2 for Double-Pole Four-Throw Double-Gate RF CMOS switch
	2011

[23]	Double-Pole Four-Throw RF CMOS switch design with double-gate transistors
	India Conference (INDICON), 2010 Annual IEEE. IEEE, 2010

[24]	Designing parameters for RF CMOS
	India Conference (INDICON), 2010 Annual IEEE. IEEE, 2010., 2010

[1]	Class-B Power Amplifier with Si-Based Double-Gate MOSFET: A Circuit Perspective Key Engineering Materials, 2022 DOI:10.4028/www.scientific.net/KEM.907.50

[2]	Design and performance analysis of SiO2-MOSFET based absorber for reflected RF signal Materials Today: Proceedings, 2022 DOI:10.1016/j.matpr.2022.02.144

[3]	Compact Noise Modeling Approach in Nano-scaled CSDG MOSFET for RF Switch Journal of Physics: Conference Series, 2021 DOI:10.1088/1742-6596/1714/1/012024

[4]	Third Order Band Pass Filter With Double-Gate MOSFET: A Circuit Perspective 2021 International Conference on Computer Communication and Informatics (ICCCI), 2021 DOI:10.1109/ICCCI50826.2021.9402445

[5]	Third Order Band Pass Filter With Double-Gate MOSFET: A Simulation Perspective IOP Conference Series: Materials Science and Engineering, 2021 DOI:10.1088/1757-899X/1126/1/012019

[6]	Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology Journal of Semiconductors, 2016 DOI:10.1088/1674-4926/37/2/024005

[7]	MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch Analog Circuits and Signal Processing, 2014 DOI:10.1007/978-3-319-01165-3_4

[8]	MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch Analog Circuits and Signal Processing, 2014 DOI:10.1007/978-3-319-01165-3_4

[9]	ANALYSIS OF DRAIN CURRENT AND SWITCHING SPEED FOR SPDT SWITCH AND DPDT SWITCH WITH THE PROPOSED DP4T RF CMOS SWITCH Journal of Circuits, Systems and Computers, 2012 DOI:10.1142/S0218126612500260

[10]	Advancement of MOSFET with the application of hafnium 2012 International Conference on Computer Communication and Informatics, 2012 DOI:10.1109/ICCCI.2012.6158903

[11]	Possibilities of HfO2 for Double-Pole Four-Throw Double-Gate RF CMOS switch 2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2011 DOI:10.1109/MAPE.2011.6156224

[12]	An approach for the design of Cylindrical Surrounding Double-Gate MOSFET 2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2011 DOI:10.1109/MAPE.2011.6156228

[13]	Drain current and switching speed of the Double-Pole Four-Throw RF CMOS switch 2011 Annual IEEE India Conference, 2011 DOI:10.1109/INDCON.2011.6139419

[14]	Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch International Journal of Communications, Network and System Sciences, 2011 DOI:10.4236/ijcns.2011.49071

[15]	Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology Journal of Computational Electronics, 2011 DOI:10.1007/s10825-011-0359-6

[16]	Double-Pole Four-Throw RF CMOS switch design with double-gate transistors 2010 Annual IEEE India Conference (INDICON), 2010 DOI:10.1109/INDCON.2010.5712754

[17]	Designing parameters for RF CMOS 2010 Annual IEEE India Conference (INDICON), 2010 DOI:10.1109/INDCON.2010.5712753

Follow SCIRP

	+1 323-425-8868
	customer@scirp.org
	+86 18163351462(WhatsApp)
	1655362766

	Paper Publishing WeChat

Wireless Engineering and Technology

Wireless Engineering and Technology

Journals Menu

Home

About SCIRP

Service

Policies