Circuits and Systems

Circuits and Systems

ISSN Print: 2153-1285
ISSN Online: 2153-1293
www.scirp.org/journal/cs
E-mail: cs@scirp.org
"Designing Parameters for RF CMOS Cells"
written by Viranjay M. Srivastava, K. S. Yadav, G. Singh,
published by Circuits and Systems, Vol.1 No.2, 2010
has been cited by the following article(s):
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[3] Introduction
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[5] Capacitive model and S-parameters of double-pole four-throw double-gate RF CMOS switch
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[6] Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
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[7] Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch
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[8] Performance of double-pole four-throw double-gate RF CMOS switch in 45-nm technology
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[9] Designing parameters for RF CMOS
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