"Annealing Effects on Electrical Properties and Interfacial Reactions of Ni/Cu Schottky Rectifiers on n-Type InP"
written by Yerpedu Munikrishna Reddy, M. K. Nagaraj, S. Sankar Naik, V. Rajagopal Reddy,
published by Journal of Modern Physics, Vol.3 No.7, 2012
has been cited by the following article(s):
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[8] Temperature-dependent non-linear resistive switching characteristics and mechanism using a new W/WO3/WOx/W structure
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[9] Analysis of Electrical Properties and Carrier Transport Mechanisms of Ru/Ti/n-InP Schottky Diodes at Room Temperature
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[10] Ru/Ti Schottky Contacts on N-type In-P (100): Temperature Dependence of Current-Voltage (IV) Characteristics
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[11] Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n-type InP
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[12] Thermo photo-electrochemical effect in n-InP/aqueous solution of orange dye/C cell
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[13] Influence of annealing temperature on the electrical, structural and surface morphology properties of Au/Cr Schottky contacts on n-type InP
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