Author(s)

Amadou Diao¹, Mamadou Wade², Moustapha Thiame³, Grégoire Sissoko¹

¹Semiconductors and Solar Energy Laboratory, Department of Physics, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal.
²Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal.
³University Assane SECK, Ziguinchor, Senegal.

The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell under polychromatic illumination and a constant magnetic field effect. By use of the continuity equation in the base of the solar cell maintained in a constant temperature at 300 K, an expression of the excess minority carriers’ density was determined according to the applied magnetic field, the base depth and the junction recombination velocity. From the expression of the minority carriers’ density, the photoconductivity of the solar cell was deduced and which allowed us to predict some recombination phenomena, the use of such solar cell in optoelectronics. The profile of the photoconductivity also permitted us to utilize a linear model in order to determine an electrical capacitance that varied with magnetic field.

Bifacial Solar Cell, Photoconductivity, Junction Recombination Velocity, Magnetic Field, Electrical Capacitance

Diao, A. , Wade, M. , Thiame, M. and Sissoko, G. (2017) Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects. Journal of Modern Physics, 8, 2200-2208. doi: 10.4236/jmp.2017.814135.