Author(s)

Richard Mane¹, Ibrahima Ly², Mamadou Wade², Ibrahima Datta¹, Marcel S. Douf¹, Youssou Traore¹, Mor Ndiaye¹, Seni Tamba², Grégoire Sissoko¹

¹Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal.
²Ecole Polytechnique de Thiès, Thiès, Sénégal.

This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal behavior of minority carrier that is better understood with Umklapp process. This study allowed to determine an optimum temperature which led to maximum diffusion coefficient value while magnetic field remained constant.

Solar cell, Diffusion Coefficient, Temperature, Magnetic Field

Mane, R. , Ly, I. , Wade, M. , Datta, I. , Douf, M. , Traore, Y. , Ndiaye, M. , Tamba, S. and Sissoko, G. (2017) Minority Carrier Diffusion Coefficient D*(B,T): Study in Temperature on a Silicon Solar Cell under Magnetic Field. Energy and Power Engineering, 9, 1-10. doi: 10.4236/epe.2017.91001.