Author(s)

Yingjian Wei^1,2, Yinye Yang^1,2*, Weifu Cen^1,2, Ruijie Li^2,3, Lin Lv^1,2

¹College of Big Data and Information Engineering, Guizhou Minzu University, Guiyang, China.
²College of Big Data and Information Engineering, Guizhou University, Guiyang, China.
³Special and Key Laboratory of Guizhou Provincial Higher Education for the Analysis and Processing of Photoelectric Information, Guizhou Minzu University, Guiyang, China.

The electronic structure and the optical properties of Ca₂Ge have been calculated by the first-principles pseudo potential method. The results of the electric structure show that Ca₂Ge bulk is a direct semiconductor with the band gap of 0.306 eV, the conduction band is mainly composed of Ca 3d, the valence bands is mainly composed of Ge 3p. With Sr-doping, Ca₂Ge bulk is a direct semiconductor with the band gap of 0.350 eV, the conduction bands are mainly composed of Ca 3d and Sr 3d, the valence bands are mainly composed of Ge 3p and Sr 3d. The results of the optical properties show that the dielectric constant of Ca₂Ge bulk is reduced from 21.52 to 13.94, the reflectivity is decreased, and the absorption is increased with Sr-doping. The optical properties are improved with Sr-doping, the results offer theoretical guide for the optical properties control of Ca₂Ge.

Ca₂Ge, Electronic Structure, Optical Properties, First Principle, Sr-Doped

Wei, Y. , Yang, Y. , Cen, W. , Li, R. and Lv, L. (2016) The Effect on the Electric Structure and Optical Properties of Ca₂Ge Bulk with Sr-Doping. Journal of Materials Science and Chemical Engineering, 4, 20-26. doi: 10.4236/msce.2016.411003.