On a Parasitic Bipolar Transistor Action in a Diode ESD Protection Device - Circuits and Systems

CS > Vol.7 No.9, July 2016

On a Parasitic Bipolar Transistor Action in a Diode ESD Protection Device ()

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Download as PDF (Size: 829KB) PP. 2286-2295

DOI: 10.4236/cs.2016.79199 1,786 Downloads 3,453 Views Citations

Author(s)

Jin Young Choi

Affiliation(s)

Department of Electronic & Electrical Engineering, Hongik University, Sejong, Korea.

ABSTRACT

In this work, we show that an excessive lattice heating problem can occur in the diode electrostatic discharge (ESD) protection device connected to a V_DD bus in the popular diode input protection scheme, which is favorably used in CMOS RF ICs. To figure out the reason for the excessive lattice heating, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-D device simulator. We analyze the simulation results in detail to show out that a parasitic pnp bipolar transistor action relating nearby p⁺-substrate contacts is responsible for the excessive lattice heating in the diode protection device, which has never been focused before anywhere.

KEYWORDS

ESD Protection, Diode Protection Device, Bipolar Transistor, Mixed-Mode Simulation, RF IC

Share and Cite:

Choi, J. (2016) On a Parasitic Bipolar Transistor Action in a Diode ESD Protection Device. Circuits and Systems, 7, 2286-2295. doi: 10.4236/cs.2016.79199.

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