Author(s)

Tetsuji Arai^1*, Hiroki Nakaie¹, Kazuki Kamimura¹, Hiroyuki Nakamura¹, Satoshi Ariizumi¹, Satoki Ashizawa¹, Keisuke Arimoto¹, Junji Yamanaka¹, Tetsuya Sato¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu²

¹Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan.
²SST Inc., Yachiyo, Japan.

We developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.1 × 1021 m^?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 10 sccm. We confirmed that the temperatures of transition-metal films increased to above 800^。C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of nickel films deposited on silicon wafers and formed nickel silicide electrodes. We found that this heat phenomenon automatically stopped after the nickel slicidation reaction finished. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability of silicon ultralarge-scale integration devices.

Selective Heating, Nickel Silicide Electrode, Hydrogen Plasma, Microwave Plasma

Arai, T. , Nakaie, H. , Kamimura, K. , Nakamura, H. , Ariizumi, S. , Ashizawa, S. , Arimoto, K. , Yamanaka, J. , Sato, T. , Nakagawa, K. and Takamatsu, T. (2016) Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices. Journal of Materials Science and Chemical Engineering, 4, 29-33. doi: 10.4236/msce.2016.41006.