Author(s)

Aram A. Sahakyan¹, Hrant N. Yeritsyan^1*, Vachagan V. Harutunyan¹, Hamlet S. Karayan², Vahan A. Sahakyan³

¹A. I. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia.
²Yerevan State University, Yerevan, Armenia.
³National Institute of Metrology, Yerevan, Armenia.

The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.

Metal-Insulator-Semiconductor (MIS) Structures, Radiation Effects, Surface States (SS) Density, Insulator-Semiconductor (I-S) Interface, Annealing

Sahakyan, A. , Yeritsyan, H. , Harutunyan, V. , Karayan, H. and Sahakyan, V. (2015) The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO₂ Structures. Journal of Modern Physics, 6, 1657-1662. doi: 10.4236/jmp.2015.611167.