Author(s)

Godwin Raj^1*, Mohan Kumar², Chandan Kumar Sarkar¹

¹Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata, India.
²SKP Engineering College, Tiruvannamalai, India.

We have demonstrated the first carrier density model for AlGaN channel with AlN buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved that the formation of 2DEG in undoped structure relied both on spontaneous and piezoelectric polarization. The electron distribution of Al concentration (0 < x < 0.5) was measured for both AlGaN channel and barrier. Barrier thickness assumed between 20 and 25 nm for validating the experimental results. The carrier concentration was observed at the specific interface of the N- and Ga-face by assuming x1, x2 = 0. The model results are verified with previously reported experimental data.

AlGaN Channel, Sheet Carrier Concentration Model, N- and Ga-face, Polarization, High Breakdown, Total Induced Net Interface Polarization

Raj, G. , Kumar, M. and Sarkar, C. (2015) Polarization and Breakdown Analysis of AlGaN Channel HEMTs with AlN Buffer. World Journal of Condensed Matter Physics, 5, 232-243. doi: 10.4236/wjcmp.2015.53024.