Deep Level Transient Spectroscopy of AlGaInP LEDs - Journal of Modern Physics

JMP > Vol.5 No.18, December 2014

Deep Level Transient Spectroscopy of AlGaInP LEDs ()

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Download as PDF (Size: 2845KB) PP. 2075-2079

DOI: 10.4236/jmp.2014.518203 5,734 Downloads 6,615 Views

Author(s)

M. Atiq^1,2, Nazir A. Naz¹, Akbar Ali^1,2*

Affiliation(s)

¹Department of Applied Physics, Federal Urdu University of Arts, Science and Technology, Islamabad, Pakistan.
²Department of Basic Sciences, Riphah International University, Islamabad, Pakistan.

ABSTRACT

Deep level transient spectroscopy (temperature scans) of AlGaInP based red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were observed. Of these, five defects assigned to energy states 0.21, 0.22, 0.24, 0.26, and 0.24 eV were characterized. Respective capture cross-sections, measured at infinite temperature (T = ∞), QUOTE were found to be 8.84 × 10^-16, 6.98 × 10^-16, 7.86 × 10^-16, 9.9 × 10^-16 and 2.1 × 10^-16 cm². Corresponding concentrations of defects were 3.7 × 10¹³, 3.5 × 10¹³, 3.2 × 10¹³, 3.3 × 10¹³ and 3.1 × 10¹³ cm^-3.

KEYWORDS

Semiconductors, MOCVD, Defects, DLTS

Share and Cite:

Atiq, M. , Naz, N. and Ali, A. (2014) Deep Level Transient Spectroscopy of AlGaInP LEDs. Journal of Modern Physics, 5, 2075-2079. doi: 10.4236/jmp.2014.518203.

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