Author(s)

Amadou Diao, Ndeye Thiam, Martial Zoungrana, Gokhan Sahin, Mor Ndiaye, Grégoire Sissoko

Laboratory of Environment Materials, Physics Department, Training and Research Unit in Applied Science, University of Ouagadougou, Ouagadougou, Burkina Faso.
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Sénégal.

In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field; the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers’ mobility. Electric parameters were derived from the diffusion coefficient equivalent circuits.

Solar Cell, Magnetic Field, Frequency Modulation, Diffusion Coefficient

Diao, A. , Thiam, N. , Zoungrana, M. , Sahin, G. , Ndiaye, M. and Sissoko, G. (2014) Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits. World Journal of Condensed Matter Physics, 4, 84-92. doi: 10.4236/wjcmp.2014.42013.