A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm²) with a current gain of I_D/I_G = 19746 at gate bias V_G = 3 V and drain bias V_D = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm². The BV gain is 250 V with V_g from -10 V to -4 V and is 350 V with V_g from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm².