Author(s)

Kurbangali B. Tynyshtykbaev, Talant Aitmukan, Ainur T. Issova, Bagdat A. Rakhymetov, Mukhtar A. Yeleuov, Serekbol Zh. Tokmoldin

Institute of Physics and Technology, Almaty, Kazakhstan.

Self-organization processes in semiconductor materials on the example of nanostructuring of por-Si at long anodic etching of p-type Si in the electrolyte with internal source of the current are shown. In conditions of a “soft” etching of the Si point defects are formed and in the subsequently occurs their spatial-temporal ordering. This leads to the ordering pores and the nanostructuring of por-Si. Self-organization mechanism of Si nanocrystallites islets is described by the effects of the elastically-deformative, defectively-deformative and capillary-fluctuation forces.

Porous Silicon; Point Defects; Self-Organization; Nanostructuring

K. Tynyshtykbaev, T. Aitmukan, A. Issova, B. Rakhymetov, M. Yeleuov and S. Tokmoldin, "Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si," Materials Sciences and Applications, Vol. 4 No. 8A, 2013, pp. 1-11. doi: 10.4236/msa.2013.48A001.