Author(s)

Yongjia Zhao, Xiaoya Zhou, Xiangliang Jin, Kehan Zhu

Electrical and Computer Engineering Department, Boise State University, Boise, USA.
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, China.

A novel responsivity model, which is based on the solution of transport and continuity equation of carriers generated both in vertical and lateral PN junctions, is proposed for optical properties of stripe-shaped silicon ultraviolet (UV) photodiodes. With this model, the responsivity of the UV photodiode can be estimated. Fabricated in a standard 0.5 μm CMOS process, the measured spectral responsivity of the stripe-shaped UV photodiode shows a good match with the numerical simulation result of the responsivity model at the spectral of UV range. It means that the responsivity model, which is used for stripe-shaped UV photodiode, is reliable.

Responsivity; Model; Lateral PN Junction; Stripe-Shaped; Silicon; Ultraviolet (UV) Photodiode; CMOS

Y. Zhao, X. Zhou, X. Jin and K. Zhu, "A Novel Responsivity Model for Stripe-Shaped Ultraviolet Photodiode," Circuits and Systems, Vol. 3 No. 4, 2012, pp. 348-352. doi: 10.4236/cs.2012.34049.